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tps7510x www.ti.com sbvs080i ? september 2006 ? revised november 2013 low dropout, two-bank led driver with pwm brightness control 1 features description the tps7510x linear low dropout (ldo) matching 2 ? regulated output current with 2% led-to-led led current source is optimized for low power matching keypad and navigation pad led backlighting ? drives up to four leds at 25ma each in a applications. the device provides a constant current common cathode topology to up to four unmatched leds organized in two banks of two leds each in a common-cathode topology. ? 28mv typical dropout voltage extends usable without an external resistor, the current source supply range in li-ion battery applications defaults to factory-programmable, preset current level ? brightness control using pwm signals with 0.5% accuracy (typical). an optional external ? two 2-led banks with independent enable resistor can be used to set initial brightness to user- and pwm brightness control per bank programmable values with higher accuracy. brightness can be varied from off to full brightness by ? no internal switching signals ? eliminates emi inputting a pulse width modulation (pwm) signal on ? default led current eliminates external each enable pin. each bank has independent enable components and brightness control, but current matching is done ? default values from 3ma to 10ma (in 1ma to all four channels concurrently. the input supply increments) available using innovative range is ideally suited for single-cell li-ion battery supplies and the tps7510x can provide up to 25ma factory eeprom programming per led. ? optional external resistor can be used for high-accuracy, user-programmable current no internal switching signals are used, eliminating troublesome electromagnetic interference (emi). the ? over-current and over-temperature tps7510x is offered in an ultra-small, 9-ball, 0.4mm protection ball-pitch wafer chip-scale package (wcsp) and a ? available in wafer chip-scale package 2,5mm 2,5mm, 10-pin son package, yielding a or 2,5mm 2,5mm son-10 very compact total solution size ideal for mobile handsets and portable backlighting applications. the applications device is fully specified over t j = ? 40 c to +85 c. ? keypad and display backlighting ? white and color leds ? cellular handsets ? pdas and smartphones 1 please be aware that an important notice concerning availability, standard warranty, and use in critical applications of texas instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 all trademarks are the property of their respective owners. production data information is current as of publication date. copyright ? 2006 ? 2013, texas instruments incorporated products conform to specifications per the terms of the texas instruments standard warranty. production processing does not necessarily include testing of all parameters. v in ena d1ad2a d1b d2b enb v ena v enb i set v batt tps7510x a3 a2 a1 c3 c2 c1 b1 b3b2 tps7510x yff 9-ball wcsp (top view) tps7510x dsk 2,5mm x 2,5mm son-10 (top view) 1 23 4 5 10 9 8 7 6 enb ena d1ad2a gnd i set v in d1bd2b nc gnd
tps7510x sbvs080i ? september 2006 ? revised november 2013 www.ti.com this integrated circuit can be damaged by esd. texas instruments recommends that all integrated circuits be handled with appropriate precautions. failure to observe proper handling and installation procedures can cause damage. esd damage can range from subtle performance degradation to complete device failure. precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ordering information (1) product id options (2) tps7510 x yyyz x is the nominal default diode output current (for example, 3 = 3ma, 5 = 5ma, and 0 = 10ma). yyy is the package designator. z is the reel quantity (r = 3000, t = 250). (1) for the most current package and ordering information see the package option addendum at the end of this document, or see the ti web site at www.ti.com . (2) default set currents from 3ma to 10ma in 1ma increments are available through the use of innovative factory eeprom programming. minimum order quantities may apply. contact factory for details and availability. absolute maximum ratings (1) over operating temperature range (unless otherwise noted). parameter value v in range ? 0.3v to +7.0v v iset , v ena , v enb , v dx range ? 0.3v to v in i dx for d1a, d2a, d1b, d2b 35ma d1a, d2a, d1b, d2b short circuit duration indefinite continuous total power dissipation internally limited junction temperature (t j ) ? 55 c to +150 c storage temperature ? 55 c to +150 c (1) stresses above these ratings may cause permanent damage. exposure to absolute maximum conditions for extended periods may degrade device reliability. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. dissipation ratings derating factor above board package r jc r ja t a = +25 c t a < +25 c t a = +70 c t a = +85 c low-k (1) yff 55 c/w 208 c/w 4.8mw/ c 480mw 264mw 192mw yff 55 c/w 142 c/w 7.0mw/ c 704mw 387mw 282mw high-k (2) dsk 40 c/w 60.6 c/w 17mw/ c 1650mw 908mw 660mw (1) the jedec low-k (1s) board used to derive this data was a 3 inch 3 inch, two-layer board with 2 ounce copper traces on top of the board. (2) the jedec high-k (2s2p) board used to derive this data was a 3 inch 3 inch, multi-layer board with 1 ounce internal power and ground planes and 2 ounce copper traces on top and bottom of the board. recommended operating conditions parameter min typ max unit v in input voltage 2.7 5.5 v i dx operating current per led 3 25 ma t pwm on-time for pwm signal 33 s t j operating junction temperature range ? 40 +85 c 2 submit documentation feedback copyright ? 2006 ? 2013, texas instruments incorporated
tps7510x www.ti.com sbvs080i ? september 2006 ? revised november 2013 electrical characteristics over operating junction temperature range (t j = ? 40 c to +85 c), v in = 3.8v, dxa and dxb = 3.3v, r set = 32.4k ? , and ena and enb = 3.8v, unless otherwise noted. typical values are at t a = +25 c. parameter test conditions min typ max unit i shdn shutdown supply current v ena,b = 0v, v dx = 0v 0.03 1.0 a i dx 5ma, v in = 3.8v 170 230 a dsk package i dx > 5ma, v in = 3.8v 250 300 a i gnd ground current i dx 5ma, v in = 4.5v 170 200 a yff package i dx > 5ma, v in = 4.5v 250 300 a t a = +25 c 0 2 4 % yff current matching 0 5 % i d package (i dxmax ? i dxmin /i dxmax ) 100% t a = ? 40 c to +85 c dsk 0 6 % package i dx %/ v in line regulation 3.5v v in 4.5v, i dx = 5ma 2.0 %/v i dx %/ v dx load regulation 1.8v v dx 3.5v, i dx = 5ma 0.8 %/v dropout voltage of any i dxnom = 5ma 28 100 v do dx current source mv i dxnom = 15ma 70 (v dx at i dx = 0.8 i dx, nom ) v iset reference voltage for current set 1.183 1.225 1.257 v yff 0.5 3 % package i set = open, i open diode current accuracy (1) v dx = v in ? 0.2v dsk 0.5 4 % package i set i set pin current range 2.5 62.5 a k i set to i dx current ratio (1) 420 v ih enable high level input voltage 1.2 v v il enable low level input voltage 0.4 v v ena = 3.8v 5.0 6.1 i ina enable pin a (v ena ) input current a v ena = 1.8v 2.2 v enb = 3.8v 4.0 4.9 i inb enable pin b (v enb ) input current a v enb = 1.8v 1.8 delay from ena and enb = low to t sd shutdown delay time reach shutdown current 5 13 30 s (i dx = 0.1 i dx, nom ) shutdown, temp increasing +165 t sd thermal shutdown temperature c reset, temp decreasing +140 (1) average of all four i dx outputs. copyright ? 2006 ? 2013, texas instruments incorporated submit documentation feedback 3
tps7510x sbvs080i ? september 2006 ? revised november 2013 www.ti.com table 1. recommended (1% tolerance) set resistor values r set (k ? ) i set ( a) i dx (ma) (1) 511 2.4 1.0 255 4.8 2.0 169 7.2 3.0 127 9.6 4.1 102 12.0 5.0 84.5 14.5 6.1 73.2 16.7 7.0 64.9 18.9 7.9 56.2 21.8 9.2 51.1 24.0 10.1 46.4 26.4 11.1 42.2 29.0 12.2 39.2 31.3 13.1 36.5 33.6 14.1 34.0 36.0 15.1 32.4 37.8 15.9 30.1 40.7 17.1 28.7 42.7 17.9 26.7 45.9 19.3 25.5 48.0 20.2 24.3 50.4 21.2 23.2 52.8 22.2 22.1 55.4 23.3 21.5 57.0 23.9 20.5 59.8 25.1 (1) i dx = (v set /r set ) k. 4 submit documentation feedback copyright ? 2006 ? 2013, texas instruments incorporated
tps7510x www.ti.com sbvs080i ? september 2006 ? revised november 2013 pin assignments yff package dsk package 9-ball wcsp 2,5mm 2,5mm son-10 (top view) (top view) terminal functions input/ name wcsp son output description enable pin, bank a. driving this pin high turns on the current source to bank a outputs. driving this pin low turns off the current source to bank a outputs. an applied pwm signal reduces the led current (between 0ma and the maximum ena a3 2 i current set by i set ) as a function of the duty cycle of the pwm signal. ena and enb can be tied together. ena can be left open or connected to gnd if not used. see the application information section for more details. d1a b3 3 o diode source current output, bank a. connect to led anode. d2a c3 4 o diode source current output, bank a. connect to led anode. enable pin, bank b. driving this pin high turns on the current source to bank b outputs. driving this pin low turns off the current source to bank b outputs. an applied pwm signal reduces the led current (between 0ma and the maximum enb a2 1 i current set by i set ) as a function of the duty cycle of the pwm signal. ena and enb can be tied together. enb can be left open or connected to gnd if not used. see the application information section for more details. v in b2 9 i supply input gnd c2 5, pad ? ground an optional resistor can be connected between this pin and gnd to set the i set a1 10 o maximum current through the leds. if no resistor is connected, i set defaults to the internally-programmed value. d1b b1 8 o diode source current output, bank b. connect to led anode. d2b c1 7 o diode source current output, bank b. connect to led anode. nc ? 6 ? not connected. copyright ? 2006 ? 2013, texas instruments incorporated submit documentation feedback 5 1 23 4 5 10 9 8 7 6 note (1): not connected gnd enb ena d1ad2a gnd i set v in d1bd2b nc (1) a3 a2 a1 c3 c2 c1 b1 b3b2
tps7510x sbvs080i ? september 2006 ? revised november 2013 www.ti.com functional block diagram 6 submit documentation feedback copyright ? 2006 ? 2013, texas instruments incorporated current reference d1ad2a d1b d2b v in enb gnd i set ena controlled current source controlled current source controlled current source controlled current source int/ext set current sense control logic control logic 800k w 1m w
tps7510x www.ti.com sbvs080i ? september 2006 ? revised november 2013 typical characteristics over operating junction temperature range (t j = ? 40 c to +85 c), v in = 3.8v, dxa and dxb = 3.3v, r set = 32.4k ? , and ena and enb = high, unless otherwise noted. typical values are at t a = +25 c. led current vs duty cycle (f = 300hz) line transient (600mv pulse) figure 1. figure 2. line transient (300mv pulse) dimming response (both channels) figure 3. figure 4. dimming response (single channel) output current vs headroom voltage figure 5. figure 6. copyright ? 2006 ? 2013, texas instruments incorporated submit documentation feedback 7 0.5ma/div 1v/div i out v in 20 s/div m 3.6v 3.9v 20ma/div 1v/div i out enb 20 s/div m 1.2v ena = 3.8v 0.4v 0.06 0 0.20 0.02 0.04 0.08 v v - (v) in out i (ma) out 2520 15 10 50 0.10 0.12 0.14 0.16 0.18 +85 c +25 c - 40 c 0.5ma/div 1v/div i out v in 20 s/div m 3.3v 3.6v 20ma/div 1v/div i out ena = enb 20 s/div m 1.2v 0.4v 30 0 100 10 20 40 duty cycle (%) i (ma) out 2520 15 10 50 50 60 70 80 90
tps7510x sbvs080i ? september 2006 ? revised november 2013 www.ti.com typical characteristics (continued) over operating junction temperature range (t j = ? 40 c to +85 c), v in = 3.8v, dxa and dxb = 3.3v, r set = 32.4k ? , and ena and enb = high, unless otherwise noted. typical values are at t a = +25 c. output current vs r set output current vs r set figure 7. figure 8. tps75105 output current vs input voltage ground current vs input voltage r set = open figure 9. figure 10. tps75105 output current vs temperature r set = open output current vs output voltage figure 11. figure 12. 8 submit documentation feedback copyright ? 2006 ? 2013, texas instruments incorporated 1.5 0 4.0 0.5 1.0 2.0 v (v) out i (ma) out 2018 16 14 12 10 86 4 2 0 2.5 3.0 3.5 +85 c +25 c - 40 c 20 - 40 - 20 0 40 temperature ( c) i (ma) out 5.45.3 5.2 5.1 5.0 4.9 4.8 4.7 4.6 60 80 85 i d2b out i d1b out i d2a out i d1a out i (ma) out v (v) in 5.45.3 5.2 5.1 5.0 4.9 4.8 4.7 4.6 3.4 4.4 4.9 5.4 3.9 5.9 +25 c +85 c - 40 c 4.0 2.5 5.5 3.0 3.5 4.5 v (v) in i ( a) m q 180175 170 165 160 155 5.0 +85 c +25 c - 40 c 140 20 420 460 500 60 100 180 r (k ) w set i (ma) out 2826 24 22 20 18 16 14 12 10 86 4 2 0 220 260 300 340 380 expanded range 50 20 100 30 40 60 r (k ) w set i (ma) out 2826 24 22 20 18 16 14 12 10 86 4 2 0 70 80 90
tps7510x www.ti.com sbvs080i ? september 2006 ? revised november 2013 applications information limitations on led forward voltages setting the output current level the tps7510x is a linear current source the tps7510x is a quad matched current source. implementing ldo regulator building blocks. each of the four current source output levels is set by therefore, there are some limitations to the forward a single reference current. an internal voltage (output) voltages that can be used while maintaining reference of 1.225v (nominal) in combination with a accurate operation. the first limitation is the resistor sets the reference current level. this maximum led forward voltage. because ldo reference current is then mirrored onto each of the technology is employed, there is the dropout voltage four outputs with a ratio of typically 420:1. the to consider. the tps7510x is an ultra-low dropout resistor required to set the led current is calculated device with typical dropouts in the range of 30mv at using equation 1 : 5ma. care must be taken in the design to ensure that the difference between the lowest possible input voltage (for example, battery cut-off) and the highest possible forward voltage yields at least 100mv of where: headroom. headroom levels less than dropout ? k is the current ratio decrease the accuracy of the current source (see ? v iset is the internal reference voltage figure 6 ). ? i led is the desired led current (1) the other limitation to consider is the minimum output for example, to set the led current level to 10ma, a voltage required to yield accurate operation. the resistor value of 51.1k ? is required. this value sets current source employs nmos mosfets, and a up a reference current of 23.9 a (1.22v/51.1k ? ). in minimum forward led voltage of approximately 1.5v turn, this reference current is mirrored to each output on the output is required to maintain highest current source, resulting in an output current of 10ma accuracy. the tps7510x is ideal for white leds and (23.9 a 420). color leds with forward voltages greater than 1.5v. this range includes red leds that have typical the tps7510x offers two methods for setting the forward voltages of 1.7v. output current levels. the led current is set either by connecting a resistor (calculated using equation 1 ) use of external capacitors from the i set pin to gnd, or leaving i set unconnected to employ the factory-programmed r set resistance. the tps7510x does not require the use of any the internal programmed resistance is implemented external capacitors for stable operation. nominal using high-precision processing and yields a stray and/or power-supply decoupling capacitance on reference current accuracy of 0.5%, nominal. the input is adequate for stable operation. capacitors accuracy using external resistors is subject to the are not recommended on the outputs because they tolerance of the external resistor and the accuracy of are not needed for stability. the internal reference voltage. use of unused outputs or tying the tps7510x automatically detects the presence of outputs together an external resistor by monitoring the current out of the i set pin. current levels in excess of 3 a signify unused outputs may be left unconnected or tied to the presence of an external resistor and the device the v in supply. while open outputs are acceptable, uses the external resistor to set the reference current. tying unused outputs to the v in supply increases esd if the current from i set is less than 3 a, the device protection. connecting unused output to ground defaults to the preset internal reference set resistor. violates the minimum recommended output voltage, the tps7510x is available with eight preset current results in current levels that potentially exceed the levels, from 3ma to 10ma (per output) in 1ma set/preset led current and should be avoided. increments. solutions using the preset internal connecting outputs in parallel is an acceptable way current level eliminate an external component, of increasing the amount of led current drive. this thereby increasing accuracy and reducing cost. configuration is a useful trick when the higher current level is a multiple of the preset value. copyright ? 2006 ? 2013, texas instruments incorporated submit documentation feedback 9 r = iset k v iset i led
tps7510x sbvs080i ? september 2006 ? revised november 2013 www.ti.com use of enable pins for pwm dimming load regulation the tps7510x divides control of the led outputs into the tps7510x is designed to provide very tight load two banks of two current sources each. each bank is regulation. in the case of a fixed current source, the controlled by the use of an independent, active-high output load change is a change in voltage. tight load enable pin (ena and enb). the enable pin can be regulation means that output voltages (led forward used for standard on/off operation of the current voltages) with large variations can be used without source, driven by standard logic levels from impacting the fixed current being sourced by the processor gpio pins, for example. drive en high to output or the output-to-output current matching. the turn on the bank of leds; drive en low to turn off the permissible variation on the output not only allows for bank of leds. large variations in white led forward voltages, but even permits the use of different color leds on another use of the enable pin is for led dimming. different outputs with minimal effect on output current. led brightness is a function of the current level being driven across the diode and the time that current is line regulation being driven through the diode. the perceived brightness of an led can be changed by either the tps7510x is also designed to provide very tight varying the current level or, more effectively, by line regulation. this architecture allows for voltage changing the time in which that current is present. transient events to occur on the power supply when a pwm signal is input into the enable pin, the (battery) without impacting the fixed output current duty cycle (high or on time) determines how long the levels or the output to output current matching. a fixed current is driven across the leds. reducing or prime example of such a supply transient event is the increasing that duration has the effect of dimming or occurrence of a transmit pulse on the radio of a brightening the led, without having to employ the mobile handset. these transient pulses can cause more complex method of varying the current level. variations of 300mv and 600mv on the supply to the this technique is particularly useful for reducing led tps7510x. the line regulation limitation is that the brightness in low ambient light conditions, where led lower supply voltage level of the event does not brightness is not required, thereby decreasing current cause the input to output voltage difference to drop consumption. the enable pins can also be used for below the dropout voltage range. led blinking, varying blink rates based on system status. although providing many useful applications, pwm dimming does have a minimum duty cycle required to achieve the required current level. the recommended minimum on time of the tps7510x is approximately 33 s. on times less than 33 s result in reductions in the output current by not allowing enough time for the output to reach the desired current level. also, having both enables switching together, asynchronously, or having one enable on at all times, impacts the minimum recommended on time (see figure 4 and figure 5 ). if one enable is already on, the speed at which the other channel turns on is faster than if both channel were turning on together or if the other channel is off. therefore, connecting one enable on figure 13. typical application diagram allows for approximately 10 s to 12 s shorter minimum on times of the switching enable channel. unused enable pins can be left unconnected or connected to ground to minimize current consumption. connecting unused enable pins to ground increases esd protection. if connected to v in , a small amount of current drains through the enable input (see the electrical characteristics table). 10 submit documentation feedback copyright ? 2006 ? 2013, texas instruments incorporated ena d1ad2a d1b d2b enbi set gnd tps7510x v in dimming pwm or cpu gpio r set (optional) li-ionbattery
tps7510x www.ti.com sbvs080i ? september 2006 ? revised november 2013 revision history note: page numbers for previous revisions may differ from page numbers in the current version. changes from revision h (january 2010) to revision i page ? changed test conditions for ground current parameter in the electrical characteristics ..................................................... 3 ? deleted figure 14; duplicate mechanical image. ................................................................................................................ 10 changes from revision g (march 2009) to revision h page ? added dsk package dissipation information to dissipation ratings table ........................................................................... 2 ? revised ground current parameter, electrical characteristics; changed symbol from i q to i gnd ; added specifications for yff and dsk packages .................................................................................................................................................. 3 ? added yff and dsk package specifications for current matching parameter, electrical characteristics ........................... 3 ? changed diode current accuracy parameter, electrical characteristics, to reflect yff and dsk package specifications ........................................................................................................................................................................ 3 ? deleted operating junction temperature range specification from electrical characteristics table to eliminate redundancy ........................................................................................................................................................................... 3 copyright ? 2006 ? 2013, texas instruments incorporated submit documentation feedback 11
package option addendum www.ti.com 15-nov-2013 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish (6) msl peak temp (3) op temp (c) device marking (4/5) samples tps75100dskr active son dsk 10 3000 green (rohs & no sb/br) cu nipdau level-1-260c-unlim -40 to 85 skx tps75100dskt active son dsk 10 250 green (rohs & no sb/br) cu nipdau level-1-260c-unlim -40 to 85 skx TPS75100YFFR active dsbga yff 9 3000 green (rohs & no sb/br) snagcu level-1-260c-unlim -40 to 85 fb tps75100yfft active dsbga yff 9 250 green (rohs & no sb/br) snagcu level-1-260c-unlim -40 to 85 fb tps75100yzr preview dsbga yz 9 tbd call ti call ti -40 to 85 tps75103yffr active dsbga yff 9 3000 green (rohs & no sb/br) snagcu level-1-260c-unlim fc tps75103yfft active dsbga yff 9 250 green (rohs & no sb/br) snagcu level-1-260c-unlim fc tps75105dskr active son dsk 10 3000 green (rohs & no sb/br) cu nipdau level-1-260c-unlim -40 to 85 chh tps75105dskt active son dsk 10 250 green (rohs & no sb/br) cu nipdau level-1-260c-unlim -40 to 85 chh tps75105yffr active dsbga yff 9 3000 green (rohs & no sb/br) snagcu level-1-260c-unlim -40 to 85 fe tps75105yfft active dsbga yff 9 250 green (rohs & no sb/br) snagcu level-1-260c-unlim -40 to 85 fe (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above.
package option addendum www.ti.com 15-nov-2013 addendum-page 2 green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. - the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. (4) there may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) multiple device markings will be inside parentheses. only one device marking contained in parentheses and separated by a "~" will appear on a device. if a line is indented then it is a continuation of the previous line and the two combined represent the entire device marking for that device. (6) lead/ball finish - orderable devices may have multiple material finish options. finish options are separated by a vertical ruled line. lead/ball finish values may wrap to two lines if the finish value exceeds the maximum column width. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.
tape and reel information *all dimensions are nominal device package type package drawing pins spq reel diameter (mm) reel width w1 (mm) a0 (mm) b0 (mm) k0 (mm) p1 (mm) w (mm) pin1 quadrant tps75100dskr son dsk 10 3000 179.0 8.4 2.73 2.73 0.8 4.0 8.0 q2 tps75100dskt son dsk 10 250 179.0 8.4 2.73 2.73 0.8 4.0 8.0 q2 TPS75100YFFR dsbga yff 9 3000 180.0 8.4 1.34 1.34 0.81 4.0 8.0 q1 tps75100yfft dsbga yff 9 250 180.0 8.4 1.34 1.34 0.81 4.0 8.0 q1 tps75103yffr dsbga yff 9 3000 180.0 8.4 1.45 1.45 0.8 4.0 8.0 q1 tps75103yfft dsbga yff 9 250 180.0 8.4 1.45 1.45 0.8 4.0 8.0 q1 tps75105dskr son dsk 10 3000 179.0 8.4 2.73 2.73 0.8 4.0 8.0 q2 tps75105dskt son dsk 10 250 179.0 8.4 2.73 2.73 0.8 4.0 8.0 q2 tps75105yffr dsbga yff 9 3000 180.0 8.4 1.45 1.45 0.8 4.0 8.0 q1 tps75105yfft dsbga yff 9 250 180.0 8.4 1.45 1.45 0.8 4.0 8.0 q1 package materials information www.ti.com 17-jun-2015 pack materials-page 1
*all dimensions are nominal device package type package drawing pins spq length (mm) width (mm) height (mm) tps75100dskr son dsk 10 3000 203.0 203.0 35.0 tps75100dskt son dsk 10 250 203.0 203.0 35.0 TPS75100YFFR dsbga yff 9 3000 182.0 182.0 20.0 tps75100yfft dsbga yff 9 250 182.0 182.0 20.0 tps75103yffr dsbga yff 9 3000 210.0 185.0 35.0 tps75103yfft dsbga yff 9 250 210.0 185.0 35.0 tps75105dskr son dsk 10 3000 203.0 203.0 35.0 tps75105dskt son dsk 10 250 203.0 203.0 35.0 tps75105yffr dsbga yff 9 3000 210.0 185.0 35.0 tps75105yfft dsbga yff 9 250 210.0 185.0 35.0 package materials information www.ti.com 17-jun-2015 pack materials-page 2

www.ti.com package outline c 0.625 max 0.30 0.12 0.8 typ 0.8 typ 0.4 typ 0.4 typ 9x 0.3 0.2 b e a d dsbga - 0.625 mm max height yff0009 die size ball grid array 4219552/a 05/2016 notes: 1. all linear dimensions are in millimeters. any dimensions in parenthesis are for reference only. dimensioning and tolerancing per asme y14.5m. 2. this drawing is subject to change without notice. ball a1 corner seating plane ball typ 0.05 c b 1 2 3 0.015 c a b symm symm a c scale 10.000d: max = e: max = 1.238 mm, min = 1.238 mm, min = 1.178 mm1.178 mm
www.ti.com example board layout 9x ( 0.23) (0.4) typ (0.4) typ ( 0.23) metal 0.05 max solder mask opening metal under solder mask ( 0.23) solder mask opening 0.05 min dsbga - 0.625 mm max height yff0009 die size ball grid array 4219552/a 05/2016 notes: (continued) 3. final dimensions may vary due to manufacturing tolerance considerations and also routing constraints. for more information, see texas instruments literature number snva009 (www.ti.com/lit/snva009). symm symm land pattern example scale:30x c 1 2 3 a b non-solder mask defined (preferred) solder mask details not to scale solder mask defined
www.ti.com example stencil design (0.4) typ (0.4) typ 9x ( 0.25) (r0.05) typ metal typ dsbga - 0.625 mm max height yff0009 die size ball grid array 4219552/a 05/2016 notes: (continued) 4. laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. symm symm c 1 2 3 a b solder paste example based on 0.1 mm thick stencil scale:30x
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